Bio: Masao Fukuma
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Dr. Masao Fukuma received his B.E., M.E. and Ph.D. degrees
in Instrumentation Engineering from Keio University, Yokohama, Japan in
1972, 1974 and 1986, respectively. In 1974, he joined NEC Central Research
Labs., where he worked on scaled down MOSFETs, TCAD and CMOS logic LSIs.
Since 2001, he has been Vice President of Laboratories, NEC Corp., where
he manages research and development on advanced electron devices, including
silicon VLSIs and compound semiconductor devices. Although his research
background is device physics, his current research interests include VLSI
architectures, circuits and devices. He is also interested in business development
based on R&D activities in NEC. He has authored and co-authored more
than 150 papers and 5 books.
Dr. Fukuma has filled various professional committee positions such as
Chairman of the VLSI Technology Symposium and Editor of The IEEE Transactions
on Electron Devices. He is an elected member of the IEEE Electron Device
Society AdCom. |
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