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Prof. Saraswat received his B.E. degree in Electronics in 1968 from the Birla Institute of Technology and Science, Pilani, India, and his M.S. and Ph.D. degrees in Electrical Engineering in 1969 and 1974 respectively from Stanford University, Stanford, CA. Professor Saraswat stayed at Stanford as a researcher and was appointed Professor of Electrical Engineering in 1983. He serves as the Chair of StanfordŐs Materials Council, and as the Associate Director of the NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing. He also serves on the leadership council of the MARCO/DARPA-funded Focus Center for Materials, Structurs, and nano-Devices. Since January 2004 he has an honorary appointment of an Adjunct Professor at the Birla Institute of Technology and Science, Pilani, India.
Professor Saraswat's research interests are in new and innovative materials, structures, and process technology of silicon and germanium devices and interconnects for nanoelectronics.
During 1969-70, he worked on microwave transistors at Texas Instruments. Returning to Stanford in 1971, he did his Ph.D. on high voltage MOS devices and circuits. After graduating he joined Stanford University as a Research Associate in 1975 and later became a Professor of Electrical Engineering in 1983. For the next 15 years, Prof. Saraswat worked on modeling of CVD of silicon, conduction in polysilicon, diffusion in silicides, contact resistance, interconnect delay and 2-D oxidation effects in silicon. He pioneered the technologies for aluminum/titanium layered interconnects, CVD of tungsten silicide MOS gates, CVD tungsten MOS gates and tunable workfunction SiGe MOS gates. During the late 80s he became interested in the economics and technology of single wafer manufacturing. He developed equipment and simulators for single wafer thermal processing, deposition and etching and technology for the in-situ measurements and real-time control. Jointly with Texas Instruments a microfactory for single wafer manufacturing was demonstrated in 1993. Since the mid 90s His group has been working on new materials, devices and interconnects for scaling MOS technology to nm range. He has pioneered several new concepts of 3-D ICs with multiple layers of heterogeneous devices. His group has recently demonstrated the first high performance germanium MOSFETs with high-k dielectrics. Since 2000 he has also been doing research on Environmentally Benign Semiconductor Manufacturing.
Prof. Saraswat is a Fellow of IEEE, member of The Electrochemical Society and The Materials Research Society. He was given the Thomas D. Callinan Award by The Electrochemical Society in May 2000 for his contributions to the dielectric science and technology. He is the recipient of the 2004 IEEE Andrew Grove Award for seminal contributions to silicon process technology. He was co-editor of the IEEE Transactions on Electron Devices during 1988 - 1990. Prof. Saraswat has graduated more than four dozen doctoral students. He has authored or co-authored over 440 technical papers, of which six have received Best Paper Award.
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