Yoshio Nishi is a Professor in Department of Electrical
Engineering (research) and also in Department of Material Science and
Engineering at Stanford University since May 2002. He also serves as Director
of Stanford Nanofabrication Facility of National Nanotechnology Infrastructure
Network of US, and Director of Research of Center for Integrated Systems.
Professor Nishi Received BS in material science and PhD in electronics
engineering from Waseda University and the University of Tokyo, respectively.
He joined Toshiba R&D in the areas of research for semiconductor device
physics and interfaces mostly in silicon, resulting in discovery of ESR
PB Center at SiO2-Si interface, the first 256bitMNOS non-volatile RAM,
SOS 16bit micro-processor and the world 1st 1Mb CMOS DRAM. He moved to
Hewlett-Packard in1986 as the Director of Silicon Process Lab, followed
by establishing ULSI Research Lab as the Founding Director. In 1995 he
joined Texas Instruments, Inc as Senior VP and Director of Research and
Development for semiconductor group, and implemented new R&D model
for silicon technology development, followed by establishing Kilby Center.
Since May 2002, he became a faculty member of Stanford University, and
his research interest covers nanoelectronics devices and materials including
metal gate/high K MOS, device layer transfer for 3D integration, nanowire
devices and non-volatile memory materials and devices. After joining Stanford,
he still served Texas Instruments as a newly created position of Chief
Scientist until the end of 2004 on a part time base. He published more
than 200 papers including conference proceedings, and co-authored and
edited 8 books. He holds more than 70 patents in US and Japan. During
the period of 1995-2002 he served SRC and International Sematech as Board
member, NNI Panel, MARCO Governing Council. etc. Dr. Nishi is the Fellow
of IEEE, a member of Japan Society of Applied Physics and the Electrochemical
Society. Recent awards which he received include 1995 IEEE Jack Morton
Award, and 2002 IEEE Robert Noyce Medal.
Spring
2006 Seminars
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